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| Preliminary data IGBT with Diode Combi Pack Short Circuit SOA Capability VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE(sat) = 2.7 V TO-247 Hole-less SMD (50N60AU1S) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, R G = 22 Clamped inductive load, L = 30 H VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 , non repetitive TC = 25C Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 6 300 V V V V A A A A s W C C C g C l l G E C (TAB) TO-247 Hole-less (50N60AU1) C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Hole-less TO-247 package for clip mounting High current rating Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package Low V CE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 750 15 100 2.7 V V A mA nA Applications l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 4 mA, VCE = VGE l l l VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l V l Space savings (two devices in one package) High power density (c) 1997 IXYS All rights reserved 97512 (5/97) IXSX50N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 23 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 45 88 70 220 200 400 6 70 230 4.5 340 400 7 600 250 60 120 S nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.15 K/W IXSX50N60AU1S TO-247 HOLE-LESS gfs Qg Q ge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = I C90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % TO-247 HOLE-LESS SMD Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 19 175 35 33 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 480 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/s; VR = 30 V TJ = 25C 0.75 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXSX50N60AU1 Fig.1 Saturation Characteristics IXSX50N60AU1S Fig.2 Output Characterstics 80 TJ = 25C VGE = 15V 13V 200 180 160 140 120 100 80 60 40 20 0 5 0 T J = 25C VGE = 15V 70 60 IC - Amperes 50 40 30 20 10 IC - Amperes 11V 13V 11V 9V 7V 9V 7V 0 0 1 2 3 4 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 T J = 25C Fig. 4 1.5 1.4 Temperature Dependence of Output Saturation Voltage VGE=15V IC = 80A VCE(sat) - Normalized 1.3 1.2 1.1 1.0 0.9 IC = 20A IC = 40A VCE - Volts 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 IC = 20A IC = 40A IC = 80A 0.8 0.7 -50 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig.5 Input Admittance 80 VCE = 10V Fig.6 1.3 Temperature Dependence of Breakdown and Threshold Voltage BV / V GE(th) - Normalized 70 60 1.2 1.1 1.0 0.9 0.8 0.7 -50 BVCES IC = 3mA IC - Amperes 50 40 30 20 10 0 TJ = 125C TJ = - 40C TJ = 25C VGE8th) IC = 4mA 4 5 6 7 8 9 10 11 12 13 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C (c) 1997 IXYS All rights reserved IXSX50N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 T J = 125C RG = 10 IXSX50N60AU1S Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 T J = 125C IC = 50A 10 8 Eoff tfi - nanoseconds tfi - nanoseconds 750 E off 9 800 Eoff - millijoules 600 tfi 6 4 2 0 500 tfi 6 400 200 0 250 3 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 IC = 50A Fig.10 Turn-Off Safe Operating Area 1000 12 V CE = 480V 100 IC - Amperes VGE - Volts T J = 125C 9 6 3 0 10 1 0.1 0.01 RG = 22 dV/dt < 6V/ns 0 50 100 150 200 250 0 100 200 300 400 500 600 700 Qg - nCoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W 0.1 Diode IGBT 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Eoff - millijoules IXSX50N60AU1 Fig.12 Typical Forward Voltage Drop 180 160 20 16 IXSX50N60AU1S Peak Forward Voltage VFR and Forward Recovery Time tfr VFR Fig.13 1000 800 600 400 200 T J = 125C IF = 60A Current - Amperes 140 VFR - Volts 120 100 80 60 40 20 0 0.5 1.0 1.5 TJ = 25C TJ = 150C TJ = 100C 12 8 4 0 tfr 2.0 2.5 0 200 400 600 800 1000 0 1200 Voltage Drop - Volts diF /dt - A/s 1.4 1.2 Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 5 TJ = 100C Normalized IRM / Qr 1.0 0.8 IRM Qr - nanocoulombs 4 I = 60A F 3 2 1 VR = 350V 0.6 0.4 0.2 0.0 0 40 80 120 160 Qr 0 1 10 100 1000 TJ - Degrees C diF /dt - A/s Fig.16 Peak Reverse Recovery Current 80 T J = 100C VR = 350V Fig.17 Reverse Recovery Time 800 TJ = 100C VR = 350V 40 max trr - nanoseconds 60 IF = 60A 600 IF = 60A IRM - Amperes 400 20 200 0 200 400 600 800 1000 0 0 200 400 600 diF /dt - A/s diF /dt - A/s (c) 1997 IXYS All rights reserved tfr - nanoseconds |
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